溅射镀膜就是最近发展起来的一种新的表面处理技术。表面处理技术能使材料的物理机械和化学性能得到提高,而溅射镀膜比以往的真空镀膜具有“高速、低温”两个显著的特点。

靶材 

靶材形状:板材,圆片,矩形,方形,圆环,圆棒,台阶圆片,台阶矩形,三角形,管状靶,套靶等或按客户要求订做,可根据客户提供的图纸要求加工,并可以为客户提供部分靶材的绑定服务。

参考尺寸:直径≤3556mm(14英寸),长度≤1000mm,宽度≤200mm,厚度≤20mm

溅射工艺有哪几种?

靶材

溅射工艺主要用于溅射刻蚀和薄膜淀积两个方面。

淀积薄膜时,溅射源置于靶极,受氩离子轰击后发生溅射。如果靶材是单质的,则在衬底上生成靶极物质的单质薄膜,若在溅射室内有意识地引入反应气体,使之与溅出的靶材原子发生化学反应而淀积于衬底,便可形成靶极材料的化合物薄膜,通常,制取化合物或合金薄膜是用化合物或合金靶直接进行溅射而得。

溅射刻蚀时,被刻蚀的材料置于靶极位置,受氬离子的轰击进行刻蚀。刻蚀速率与靶极材料的溅射产额、离子流密度和溅射室的真空度等因素有关。溅射刻蚀时,应尽可能从溅射室中除去溅出的靶极原子。常用的方法是引入反应气体,使之与溅出的靶极原子反应生成挥发性气体,通过真空系统从溅射室中排出。

Sputter coating is a new surface treatment technology that has recently been developed. The surface treatment technology can improve the physical and mechanical properties of the material, and the sputter coating has two remarkable characteristics of "high speed and low temperature" compared with the conventional vacuum coating.

Target

Target shape: sheet, disc, rectangle, square, ring, round bar, step disc, step rectangle, triangle, tubular target, set target, etc. or customized according to customer requirements, can be processed according to the drawings provided by customers, And can provide customers with a binding service for some targets.

Reference size: diameter ≤ 3556mm (14 inches), length ≤ 1000mm, width ≤ 200mm, thickness ≤ 20mm

What kinds of sputtering processes are there?

Target

The sputtering process is mainly used for both sputtering etching and thin film deposition.

When the film is deposited, the sputtering source is placed on the target, and sputtering occurs after bombardment with argon ions. If the target is elemental, a simple film of the target substance is formed on the substrate, and if the reaction gas is intentionally introduced into the sputtering chamber to chemically react with the splashed target atoms and deposited on the substrate, A compound film of a target material can be formed. Usually, a compound or an alloy film is obtained by directly sputtering a compound or an alloy target.

During sputter etching, the etched material is placed at the target position and etched by bombardment with argon ions. The etch rate is related to factors such as the sputtering yield of the target material, the ion current density, and the vacuum of the sputtering chamber. When sputter etching, the splashed target atoms should be removed from the sputtering chamber as much as possible. A common method is to introduce a reaction gas to react with the splashed target atoms to form a volatile gas, which is discharged from the sputtering chamber through a vacuum system.